Self-Organization of Nanoislands on the Surface of Silicon and Gallium Arsenide Single Crystals Stimulated by Spatially Periodic Laser Radiation Fields

Autor:	E Ya Daume, S. V. Tikhov, Yu. K. Verevkin, V N Petryakov, Yu. Yu. Gushchin
Rok vydání:	2005
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Period (periodic table) business.industry chemistry.chemical_element Radiation Polarization (waves) Laser Gallium arsenide law.invention Standing wave Crystal chemistry.chemical_compound Optics chemistry law Optoelectronics business
Zdroj:	Technical Physics Letters. 31:759
ISSN:	1063-7850
DOI:	10.1134/1.2061738
Popis:	Four interfering laser beams acting upon the surface of silicon and gallium arsenide single crystals stimulate the self-organization of nanoislands, which is manifested by the development of processes controlling the size of islands in a two-dimensional periodic structure formed on the sample surface. The influence of the polarization of interfering beams on the character of this self-organization has been studied. Islands with lateral dimensions from 60 to 100 nm and a height of 6–12 nm have been obtained. The lateral dimensions of nanoislands are 5–10 times smaller than the period of a standing wave of the laser radiation field, which is explained by the influence of elastic stresses developed at the crystal surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8cc6ff1b570c0d339439be53b44bdef https://doi.org/10.1134/1.2061738 Zobrazit plný text záznamu Plný text ve formátu PDF