Modified Acetal Approach to 157nm Resist Design
| Autor: | Andrew J. Blakeney, John P Hatfield, Binod De, Plamen Tzviatkov, Scott Scales, Stephanie Dilocker, Jeff Eisele, Murrae J. Bowden, Sanjay Malik, Tadayoshi Kokubo |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
chemistry.chemical_classification
Optical absorbance Materials science Polymers and Plastics Silicon Bilayer Organic Chemistry Acetal technology industry and agriculture chemistry.chemical_element Chemical amplification Polymer Photochemistry complex mixtures Outgassing chemistry.chemical_compound chemistry Resist Polymer chemistry Materials Chemistry |
| Zdroj: | Journal of Photopolymer Science and Technology. 15:637-642 |
| ISSN: | 1349-6336 0914-9244 |
| DOI: | 10.2494/photopolymer.15.637 |
| Popis: | Optical absorbance data on a variety of acetal-derivatized hydroxystyrene based polymers are reported at 157nm. Acetals based on tertiary butyl, cyclohexyl ethyl and a silicon-derivative show improved transparency of the corresponding polymers compared with the parent hydroxystyrene backbone. Silicon-acetal demonstrated capability to resolve 80nm dense trenches in a bilayer resist system. No silicon outgassing was observed upon 157nm exposure. The resist also displayed excellent O2/SO2-etch properties. |
| Databáze: | OpenAIRE |
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