Influence of Te on the morphology of InAs self-assembled nanocrystals

Autor:	G. A. M. Sáfar, F. Rochet, J. M. C. Vilela, A. G. de Oliveira, M.S. Andrade, Bernardo R. A. Neves, Wagner N. Rodrigues, M. V. B. Moreira
Rok vydání:	1999
Předmět:	Analytical chemistry chemistry.chemical_element Heterojunction Condensed Matter Physics Inorganic Chemistry Crystallography chemistry Nanocrystal Monolayer Materials Chemistry Self-assembly Tellurium Stoichiometry Deposition (law) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :1172-1175
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(99)00015-9
Popis:	InAs nanocrystals were grown by MBE on GaAs(1 0 0) with Te coverage ( θ Te ) ranging from zero to 0.45 monolayers (ML). The height, radius and surface density of these nanocrystals (nominal InAs coverage varying from 1.8 to 4.5 ML) were measured by atomic force microscopy (AFM). We observed that for θ Te =0.45 ML the transition coherence–incoherence is either delayed or absent for the InAs coverage range studied. Te deposition has the opposite effect of the pressure of As, regarding the size the islands. The size of the nanocrystals, for 0.45 monolayers of Te, varies smoothly up to 3.5 monolayers of InAs. Samples with Te resulted in `soft’ small nanocrystals, which could be a sign of a lack of stoichiometry in the small nanocrystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8c7fd8bd033558890371e3b67acb9a2 https://doi.org/10.1016/s0022-0248(99)00015-9 Zobrazit plný text záznamu Full Text from ScienceDirect