Optimum low-voltage silicon power switches fabricated using scaled trench MOS technologies

Autor:	William Andrew Hennessy, M. Ghezzo, Michael S. Adler, C. S. Korman, H.-R. Chang, K. Shenai, V. Temple
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Omega Avalanche breakdown chemistry Trench Optoelectronics Power semiconductor device Power MOSFET business Low voltage Voltage
Zdroj:	International Technical Digest on Electron Devices.
DOI:	10.1109/iedm.1990.237042
Popis:	Optimum low-voltage silicon power MOSFET technologies with forward conductivities approaching the silicon limit are presented. Vertical scaled trench power MOSFETs with measured performances of V/sub DB/=55 V (R/sub sp/=0.2 m Omega -cm/sup 2/, k/sub DEV/=5.7 Omega pF) and V/sub DB/=35 V (R/sub sp/=0.15 m Omega -cm/sup 2/, k/sub DEV/=4.3 Omega -pF) were developed, where V/sub DB/ is the drain-source avalanche breakdown voltage, R/sub sp/ is the specific on-state resistance, and K/sub DEV/ is the input device technology factor. Measured performances are in excellent agreement with detailed two-dimensional device simulations. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8c36c0b47d5fabd3967ebdb791d3bd7 https://doi.org/10.1109/iedm.1990.237042 Zobrazit plný text záznamu