Adhesion in growth of defect‐free silicon over silicon oxide

Autor:	M. Konuma, Florian Banhart, E. Bauser, R. Köhler, A. Gutjahr, H. Raidt, I. Silier, B. Jenichen
Rok vydání:	1996
Předmět:	Materials science Silicon business.industry Oxide General Physics and Astronomy chemistry.chemical_element Adhesion Epitaxy law.invention Crystallography chemistry.chemical_compound Semiconductor chemistry law Optoelectronics Wafer Electron microscope business Silicon oxide
Zdroj:	Journal of Applied Physics. 80:4101-4107
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363371
Popis:	By applying liquid phase epitaxy, we have grown defect‐free silicon and silicon–germanium layers on partially oxide‐masked Si wafers. The growth of the layers started epitaxially in oxide‐free seeding areas and proceeded laterally over the thermal oxide film. Detailed studies by x‐ray topography and electron microscopy show that the obtained thin semiconductor‐on‐insulator layers bend towards the oxide during lateral growth. The bending of the layers can be ascribed to adhesion and interfacial forces. Adhesion operates across a gap between the closely spaced surfaces of the oxide and the epitaxial Si and facilitates lateral growth of high‐quality semiconductor layers on dissimilar layers or substrates. The technical potential of adhesion‐dependent solution growth on dissimilar substrates is discussed.
Databáze:	OpenAIRE
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