High-Efficiency, Multijunction nc-Si:H-Based Solar Cells at High Deposition Rate
| Autor: | A. Banerjee, Jeffrey Yang, Subhendu Guha, S. Almutawalli, G. Pietka, D. Beglau, F. Liu, Tining Su |
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| Rok vydání: | 2012 |
| Předmět: |
Glow discharge
Materials science Silicon business.industry Photovoltaic system Nanocrystalline silicon chemistry.chemical_element Condensed Matter Physics Nanocrystalline material Electronic Optical and Magnetic Materials Amorphous solid law.invention chemistry law Solar cell Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Journal of Photovoltaics. 2:99-103 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising candidate to replace the hydrogenated amorphous silicon-germanium alloy (a-SiGe:H) in multijunction thin-film silicon solar cells due to its superior long-wavelength response and stability against light-induced degradation. Due to its indirect bandgap, the absorbing nc-Si:H layer needs to be much thicker than its amorphous counterpart. For nc-Si:H-based solar cells to be commercially viable, the challenge is to deposit the nc-Si:H layer at a high rate with good quality. In this paper, we report on the development of our proprietary high-frequency glow discharge deposition technology to fabricate high-efficiency, large-area, a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells at a high deposition rate >;1 nm/s. The National Renewable Energy Laboratory (NREL) has confirmed stable efficiency of 12.41% on a 1.05-cm2 solar cell. We have attained initial efficiency of 12.33% on an encapsulated cell of aperture area ~400 cm2 ; the corresponding stable efficiency is projected to be 11.7-11.9%. |
| Databáze: | OpenAIRE |
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