TiC nanoisland formation on 6H–SiC(0001)Si

Autor:	W. Platow, Robert J. Nemanich, Dale E. Sayers, Robert F. Davis, Jaehwan Oh, J. D. Hartman
Rok vydání:	2002
Předmět:	Materials science Titanium carbide Annealing (metallurgy) General Physics and Astronomy chemistry.chemical_element XANES law.invention Crystallography chemistry.chemical_compound Chemical engineering chemistry law Silicon carbide Hydrogen etching Scanning tunneling microscope Spectroscopy Titanium
Zdroj:	Journal of Applied Physics. 91:6081-6084
ISSN:	1089-7550 0021-8979
Popis:	Spontaneous formation of titanium carbide nanoislands on silicon carbide substrates has been studied with scanning tunneling microscopy and x-ray absorption near-edge spectroscopy. Scratch-free and atomically flat 6H–SiC(0001)Si substrates were prepared by high temperature hydrogen etching. The surfaces were subsequently cleaned by in situ ultrahigh vacuum annealing. Titanium carbide nanoislands were formed by titanium deposition and annealing at 950 °C. The average width (10–50 nm) and separation of the Ti islands was controlled by varying the titanium coverage (0.1–0.3 nm) and the annealing time (1–20 min). At the lowest coverage, the islands were uniformly distributed over the surface, while at higher coverage the islands tended to collect at the substrate step edges.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f88eff36ccee86622e2292f046825f99 https://doi.org/10.1063/1.1465121 Zobrazit plný text záznamu