Angled flip-flop single-event cross sections for submicron bulk CMOS technologies
| Autor: | W.T. Holman, S. Jagannathan, T. D. Loveless, K. Lilja, N. J. Gaspard, Lloyd W. Massengill, Rick Wong, M. Bounasser, Bharat L. Bhuva, Trey Reece, S.-J. Wen, Z. J. Diggins |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Hardware_PERFORMANCEANDRELIABILITY law.invention Cross section (physics) Optics CMOS Single event upset law Angle of incidence (optics) Hardware_INTEGRATEDCIRCUITS Electronic engineering High incidence business Event (particle physics) Flip-flop Hardware_LOGICDESIGN |
| Zdroj: | 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS). |
| DOI: | 10.1109/radecs.2013.6937376 |
| Popis: | Experimental angled heavy-ion single-event cross sections for hardened and unhardened flip-flops for technology nodes ranging from 28-nm to 130-nm are compared. Results show that hardened flip-flop cross sections increase at a faster rate with increasing angle of incidence than unhardened designs as technology scales. Hardened flip-flop cross section approaches unhardened flip-flop cross section for high incidence angular strikes, and surpasses unhardened flip-flop cross sections at 28-nm feature sizes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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