Modelling and simulating the selective epitaxial growth of silicon under consideration of anisotropic growth rates

Autor:	S. Ulbrich, T. Preusser, D. Temmler, T. Ronsch, R.G. Spallek
Rok vydání:	2004
Předmět:	Work (thermodynamics) Materials science Silicon chemistry Etching (microfabrication) Electronic engineering chemistry.chemical_element Deposition (phase transition) Context (language use) Anisotropic growth Anisotropy Epitaxy Engineering physics
Zdroj:	Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710).
DOI:	10.1109/essderc.2003.1256895
Popis:	This work presents a new model for the simulation of thin layer deposition and etching processes. Especially suited for the simulation of highly anisotropic processes, the frontier model is introduced in the context of selective epitaxial growth of silicon. The general approach to this new simulation model is described, and the simulation of selective epitaxial growth is validated against experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8800f4076a09492af5ce09ebcc76bf8 https://doi.org/10.1109/essderc.2003.1256895 Zobrazit plný text záznamu