Influence of Production Processes on PID-s Sensitivity of c-Si Modules and Novel Mitigation Strategies
| Autor: | Stauffenberg, A., Jäckel, B., Pander, M., Fröbel, J., Erban, C. |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| DOI: | 10.4229/wcpec-82022-3do.19.5 |
| Popis: | 8th World Conference on Photovoltaic Energy Conversion; 605-608 Potential-induced degradation (PID) is one of the major degradation mechanisms of PV modules, reducing their power and useful time of operation. Novel mitigation strategies for the shunting type, PID-s, on module level are investigated by varying production parameters and materials in modules. This includes variations of encapsulant material (silicone and EVA), silicone mixing ratio and degree of EVA cross-linking as well as different front and back cover constructions using glass and transparent polymers. Modules are stressed under IEC standard conditions for PID-s and characterized using I-V-characteristics and electroluminescence imaging. Modules with silicone encapsulant are resistant to degradation after 300+ hours of PID-s stress exposure, but are not with damp heat preconditioning. A higher mixing ratio between silicone and hardener might benefit PID-s resistance. Degradation of modules with EVA encapsulant varies strongly with parameters: A PID insensitive EVA with high degree of cross-linking reduces PID-s sensitivity, but ultimately can’t stop degradation. Recovery from PID-s by inverting the potential is possible but limited, depending on the degree of degradation. Modules with a polymer sheet in front instead of glass show significantly reduced PID-s susceptibility, leading to a new mitigation strategy. |
| Databáze: | OpenAIRE |
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