Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material
| Autor: | Tang Su, Xixi Xie, Bowen Shen, Shuang Jia, Yang Ma, Wei Yuan, Wei Han, Yunyan Yao, Xirui Wang, Yangyang Chen, Wenyu Xing, Yu Yun, Jiangnan Zhong |
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| Rok vydání: | 2017 |
| Předmět: |
Superconductivity
Materials science Oxide chemistry.chemical_element 02 engineering and technology Gating 010402 general chemistry 021001 nanoscience & nanotechnology Electrochemistry 01 natural sciences Oxygen 0104 chemical sciences chemistry.chemical_compound Ferromagnetism chemistry Chemical physics Electric field Ionic liquid General Materials Science 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 10:1383-1388 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | Ionic liquid gating can markedly modulate a material’s carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on the channel resistance of Cr2Ge2Te6 devices ( |
| Databáze: | OpenAIRE |
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