Plasma enhanced atomic layer deposition of molybdenum oxide from Mo(CO)6 and O2 plasma for 2D electronic device application
| Autor: | Lin Chen, David Wei Zhang, Ya-Wei Dai, Shi-Jin Ding, Qing-Qing Sun, Mao-Lin Shi, Peng Zhou, Jing Xu, Qian Cao |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Scanning electron microscope Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Molybdenum hexacarbonyl 0104 chemical sciences Amorphous solid X-ray reflectivity chemistry.chemical_compound Atomic layer deposition X-ray photoelectron spectroscopy chemistry Molybdenum Thin film 0210 nano-technology |
| Zdroj: | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| DOI: | 10.1109/icsict.2016.7998636 |
| Popis: | This work is focused on synthesis of molybdenum oxide (MoO3) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)6) is selected as precursor for Mo and O2 is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity (XRR), scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRR result indicates the linear growth of the thin films. While amorphous as-deposited film was observed by XRD. XPS and SEM was applied to further analyze the quality of the film. The growth of MoO3 can be layer controllable and have good film continuity. There merits are helpful in further synthesis of MoS2 by sulfurization. |
| Databáze: | OpenAIRE |
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