Study of molecular beam epitaxial growth and optical characteristics of HgCdTe
| Autor: | Xue-chu Shen, Pu-lin Liu, Shi-ping Guo, J. W Tomm, Jia-ming Zhang, Shi-xin Yuan |
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| Rok vydání: | 1996 |
| Předmět: |
Photoluminescence
Materials science Infrared business.industry Astrophysics::Instrumentation and Methods for Astrophysics General Physics and Astronomy Epitaxy Magnetic field Condensed Matter::Materials Science symbols.namesake Reflection (mathematics) Optics Electron diffraction symbols Optoelectronics business Raman scattering Molecular beam epitaxy |
| Zdroj: | Acta Physica Sinica (Overseas Edition). 5:370-376 |
| ISSN: | 1004-423X |
| DOI: | 10.1088/1004-423x/5/5/007 |
| Popis: | HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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