Raman spectroscopy study of annealed incommensurate graphene bilayer on SiO2 substrate
| Autor: | Riadh Othmen, A. Cavanna, H. Ajlani, Meherzi Oueslati, Ali Madouri |
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| Rok vydání: | 2016 |
| Předmět: |
Total internal reflection
Materials science Condensed matter physics Annealing (metallurgy) Graphene Bilayer Doping 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention symbols.namesake law 0103 physical sciences symbols General Materials Science Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Raman spectroscopy Bilayer graphene |
| Zdroj: | Superlattices and Microstructures. 90:96-106 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2015.12.009 |
| Popis: | A Raman study of a twisted bilayer graphene grown by chemical vapor deposition (CVD) and transferred on SiO2 substrate is presented. The Raman spectra show the G and 2D peaks at 1582 cm−1 and 2683 cm−1 respectively. The presence of the interlayer Raman band (I band) in the range 1374 cm−1 - 1440 cm−1 and of the R band at 1484 cm−1, as well as the single-Lorentzian line shape of the 2D peak, reveals the incommensurate stacking of the two graphene layers. From the R band, we determined that the twist angle (θ = 13.9°) is close to the critical angle θc (11.9° for the excitation photon energy of 2.33 eV). The effect of annealing at 1050 °C of the incommensurate twisted bilayer graphene (ItBLG) structure is then studied. The analysis of the Raman spectra allows us to directly quantify the effects of doping and of strain on each graphene layer. |
| Databáze: | OpenAIRE |
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