XPS characterization of the interface between low dielectric constant amorphous fluoropolymer film and evaporation-deposited aluminum
| Autor: | Qing-Quang Zhang, David Wei Zhang, Wei William Lee, Shi-Jin Ding, Yong-Dong Zhou, Ji-Tao Wang |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Dielectric Condensed Matter Physics Surfaces Coatings and Films Carbide Amorphous solid chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Aluminium Fluoropolymer Fluoride |
| Zdroj: | Applied Surface Science. 178:140-148 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(01)00313-0 |
| Popis: | The interaction of low dielectric constant amorphous fluoropolymer (AF) film with evaporation-deposited aluminum has been investigated via high-resolution X-ray photoelectron spectroscopy (XPS). For the sake of gaining the interface of the Al/AF sample, the partial aluminum has been removed by Ar ion etching. In situ XPS measurements show that Al fluoride, COAl and Al carbide are formed at the interface between aluminum and AF. The formation of Al fluoride results mainly from a reaction between Al atom and F free radicals due to the breakage of one CF bond in CF 3 groups, meanwhile, this also leads to an increase in CF 2 groups. After annealing, the relative content of CF bonds at the interface decreases remarkably, and the relative concentrations of COAl and AlC complexes increase evidently. However, the relative percentage of Al fluoride decreases, indicating that Al fluoride has higher fluidity than the COAl and AlC complexes against annealing. Moreover, the relative percentages of the elements at the interface show that the annealing causes a little diffusion of Al into the AF film. Possible reaction mechanisms of Al with AF are also discussed. |
| Databáze: | OpenAIRE |
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