P-20: Performance Improvement for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

Autor:	Chur Shyang Fuh, Po-Tsun Liu, Che Chia Chang, Yang Shun Fan, Chih Hsiang Chang
Rok vydání:	2014
Předmět:	Materials science Annealing (metallurgy) business.industry Electrical engineering Field effect chemistry.chemical_element Amorphous solid Zinc tin oxide Post annealing chemistry Thin-film transistor Optoelectronics business Indium
Zdroj:	SID Symposium Digest of Technical Papers. 45:1017-1020
ISSN:	0097-966X
Popis:	In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm2/Vs, Vth of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO2 interface decreased to 2.16 × 1017 cm−3eV−1 and 4.38 × 1012 cm−2eV−1, respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f83e37719ac238c62647d4726021cd3f https://doi.org/10.1002/j.2168-0159.2014.tb00264.x Zobrazit plný text záznamu Plný text