Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
| Autor: | Toshikazu Nishida, Fan Ren, S. N. G. Chu, K.H. Baik, V. Chandrasekaran, Stephen J. Pearton, Jihyun Kim, Brent P. Gila, Mark Sheplak, J.-I. Chyi, C. R. Abernathy, B. S. Kang, Chang Chi Pan, G.-T. Chen, Suku Kim |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Strain (chemistry) business.industry Aluminium nitride Wide-bandgap semiconductor Conductance Heterojunction Gallium nitride High-electron-mobility transistor chemistry.chemical_compound chemistry Ultimate tensile strength Optoelectronics Composite material business |
| Zdroj: | Applied Physics Letters. 83:4845-4847 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1631054 |
| Popis: | The changes in the conductance of the channel of Al0.3Ga0.7N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance were roughly linear over the range up to 2.7×108 N cm−2, with coefficients for planar devices of −6.0+/−2.5×10−10 S N−1 m−2 for tensile strain and +9.5+/−3.5×10−10 S N−1 m−2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5+/−1.1×10−13 S N−1 m−2 for tensile strain and 4.8×10−13 S N−1 m−2 for compressive strain. The large changes in the conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications. |
| Databáze: | OpenAIRE |
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