Investigation of Cs+ bombardment effects in ultra-thin oxynitride gate dielectrics characterization by DSIMS
| Autor: | Yun Wang, Han Wei Teo, Si Ping Zhao, Zhi Qiang Mo, Kian Kok Ong |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Oxide Analytical chemistry 02 engineering and technology Dielectric Nitride 010402 general chemistry 021001 nanoscience & nanotechnology Mass spectrometry 01 natural sciences 0104 chemical sciences Ion Secondary ion mass spectrometry chemistry.chemical_compound chemistry Sputtering Surface layer 0210 nano-technology |
| Zdroj: | 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). |
| DOI: | 10.1109/ipfa.2017.8060216 |
| Popis: | A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a period of time. Cs, O and N depth profiles were examined by Dynamic Secondary Ion Mass Spectrometry (DSIMS). The bombarded sample and new sample were investigated for surface layer formation. Profile depth scale was calibrated by machine sputter rate according to a brand new standard sample with known nitride oxide layer thickness. The relationships of formed layer thickness versus bombardment time and distance were studied. This study aims to understand the effects of Cs layer formation in ultra-shallow oxynitride sample analysis to ensure accuracy of sample thickness quantification. |
| Databáze: | OpenAIRE |
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