| Autor: |
Zilong Zhang, Keyun Gu, Jian Huang, Yue Shen, Shang Yi, Meiyong Liao, Ke Tang, Linjun Wang |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Vacuum. 195:110671 |
| ISSN: |
0042-207X |
| Popis: |
The realization of the free interface strain between a Ga2O3 material and a substrate is significantly critical to fulfill the requirements for the fabrication of high-quality Ga2O3 material. In this work, a seed layer (SL) was utilized to circumvent the interface strain issue for enhancing quality and reducing surface roughness. The smooth surface and high-quality Ga2O3 thin film on (100)-Si substrate can be achieved under the growth parameters of 700 °C and 6 mTorr. The as-annealed Ga2O3 thin films grown on variously oriented Si substrates host various microstructure and surface roughness due to the different lattice mismatches at interfaces. The differences in surface roughness of Ga2O3 thin films are greatly eliminated by the deposition of a SL of Ga2O3 thin film on Si substrate. The PL spectra of as-annealed Ga2O3 thin films consist of three peaks at UV and green emission regions. The green luminescence intensity is reduced through the deposition of a SL, indicating lower surface defects and oxygen vacancy concentration. The Ga2O3 thin film with a SL presents a small RMS, high quality and limited dark-current. The work offers a promising strategy to make Ga2O3 film with high-quality and smooth surface on Si for fabricating the functional devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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