Laser-annealed refractory metal silicide films on GaAs

Autor:	T. Efthimiopoulos, Phillip E. Thompson, D.V. Morgan, Z. Hatzopoulos, A. Christou, W. T. Anderson, M. Kudumas, J. M. Eridon, C. R. Gossett, C. Michelakis
Rok vydání:	1990
Předmět:	Materials science business.industry Schottky barrier Schottky effect Schottky diode Laser law.invention chemistry.chemical_compound chemistry law Silicide Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering Thin film business Ohmic contact
Zdroj:	Electronics Letters. 26:62-64
ISSN:	1350-911X
DOI:	10.1049/el:19900041
Popis:	A new method of depositing refractory metal silicide films was developed for both Schottky barriers and ohmic contacts to GaAs devices. Pulsed excimer laser annealing of the films was used to lower the gate sheet resistances and in the case of ohmic contacts to remove the interface barrier. Rutherford backscattering analysis showed that interdiffusion induced by laser annealing was reduced with In-doped GaAs compared to undoped GaAs substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f7fe446b4a75562047402cafee5041e7 https://doi.org/10.1049/el:19900041 Zobrazit plný text záznamu