Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies
| Autor: | A. Privat, Lawrence T. Clark, John Brunhaver, Madeline Esposito, A. Duvnjak, Hugh J. Barnaby, Matthew J. Marinella, Jack E. Manuel, Keith E. Holbert, R. Jokai, M. Spear, Michael Lee McLain, M. P. King |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics business.industry Chip 01 natural sciences Trap (computing) Reliability (semiconductor) Nuclear Energy and Engineering CMOS Logic gate Absorbed dose 0103 physical sciences Optoelectronics Node (circuits) Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Transactions on Nuclear Science. 68:671-676 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2021.3065267 |
| Popis: | Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation layer give rise to a new radiation-induced leakage path which might lead to a reliability issue in CMOS technologies at or below the 14-nm node. TCAD simulations are performed and an analytical model for TID-induced leakage current is presented to support analysis of the identified TID mechanism. TCAD simulation and analytical model results are consistent with the experimental data. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|