Advanced patterning approaches for Cu/Low-k interconnects
| Autor: | Cao Min, Shau-Lin Shue, Yu-Sheng Wang, Hsin-Chieh Yao, Cheng-Hsiung Tsai, H. W. Tien, C. H. Huang, Jay Wu, Chung-Ju Lee |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Interconnection Materials science business.industry Copper interconnect Time-dependent gate oxide breakdown 02 engineering and technology RC time constant 021001 nanoscience & nanotechnology 01 natural sciences Etching (microfabrication) 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | 2017 IEEE International Interconnect Technology Conference (IITC). |
| Popis: | The RC delay, electro migration (EM) and TDDB performance become more challenges to meet device requirement as continuous geometry shrink on BEOL dual damascene interconnects. To overcome these challenges from interconnect patterning point of view, we proposed Cu subtractive RIE as a potential solution for next generation Cu/Low-k interconnects. |
| Databáze: | OpenAIRE |
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