Transport property of Sn-doped In0.5Ga0.5P layers grown by liquid phase epitaxy
| Autor: | H. L. Park, I.T. Yoon |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Electron mobility
Condensed matter physics Scattering Chemistry Doping Metals and Alloys Analytical chemistry Surfaces and Interfaces Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ionized impurity scattering Condensed Matter::Materials Science Impurity Hall effect Materials Chemistry Shallow donor |
| Zdroj: | Thin Solid Films. 340:297-300 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)01229-2 |
| Popis: | The temperature-dependent Hall mobility and carrier concentration of Sn-doped In 0.5 Ga 0.5 P epilayers grown on (100) semi-insulating GaAs substrates by the liquid phase epitaxy technique have been investigated in the range of 77–300 K. It was found that the Sn-doped In 0.5 Ga 0.5 P epilayer was heavily compensated with the compensation ratio of ∼0.4–0.6. It was also found that the Sn shallow donor has an ionization energy 17–12 meV with increasing carrier concentrations through Hall measurements. The model taking into account ionized impurity, alloy and space-charge scattering mechanisms is considered in order to properly portray the observed features of the electron mobility results. The theoretical prediction is in good agreement with the observed results. The electron mobility was limited by ionized scattering up to 120 K and was also limited by alloy, space-charge scattering up to 300 K. |
| Databáze: | OpenAIRE |
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