| Autor: |
Ma Yingqi, Chen Rui, Han Jianwei, Zhu Xiang, Shangguan Shipeng |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 IEEE Radiation Effects Data Workshop. |
| DOI: |
10.1109/redw.2019.8906568 |
| Popis: |
This paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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