Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures

Autor:	W. E. Plano, Thomas L. Paoli, Robert L. Thornton, J. E. Epler, R. W. Kaliski, Louis J. Guido, Nick Holonyak, Robert D. Burnham, K. C. Hsieh
Rok vydání:	1987
Předmět:	Photoluminescence Materials science Condensed matter physics Annealing (metallurgy) Superlattice General Physics and Astronomy Mineralogy Heterojunction Activation energy Dielectric Thin film Quantum well
Zdroj:	Journal of Applied Physics. 61:1372-1379
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.338116
Popis:	Data are presented showing that the Al‐Ga interdiffusion coefficient (DAl‐Ga) for an AlxGa1−xAs‐GaAs quantum‐well heterostructure, or a superlattice, is highly dependent upon the crystal encapsulation conditions. The activation energy for Al‐Ga interdiffusion, and thus layer disordering, is smaller for dielectric‐encapsulated samples (∼3.5 eV) than for the case of capless annealing (∼4.7 eV). The interdiffusion coefficient for Si3N4‐capped samples is almost an order of magnitude smaller than for the case of either capless or SiO2‐capped samples (800≤T≤875 °C). Besides the major influence of the type of encapsulant, the encapsulation geometry (stripes or capped stripes) is shown, because of strain effects, to be a major source of anisotropic Al‐Ga interdiffusion.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f7d03102733ec84a91b8ba78b088b794 https://doi.org/10.1063/1.338116 Zobrazit plný text záznamu