3d-Transition Metals in Cubic and Hexagonal Silicon Carbide

Autor: Wanda V. M. Machado, João F. Justo, Lucy V. C. Assali
Rok vydání: 2005
Předmět:
Zdroj: Materials Science Forum. :531-534
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.483-485.531
Popis: The electronic and structural properties of isolated 3d-transition metal impurities in 3C, 4H, and 2H silicon carbide have been investigated bytotal energy ab initio methods. The stability, spin states and transition energies of substitutional (Si sub-lattice) Cr, Mn, and Fe impurities in several charge states were computed. Our results are discussed in the context of available experimental data.
Databáze: OpenAIRE