Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
| Autor: | Kai-Hsang Chen, Kuan-Chang Chang, Ting-Chang Chang, Hao Wang, Yong-En Syu, Jung-Hui Chen, Yao-Feng Chang, Simon M. Sze, Hsing-Hua Wu, Jian-Yu Chen, Min-Chen Chen, Geng-Wei Chang, Ya-Hsiang Tai, Cong Ye, Jhih-Hong Pan, Tai-Fa Young, Tsung-Ming Tsai, J. C. Lou, Tian-Jian Chu |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Process (computing) Forming processes Charge (physics) Thermal conduction Electronic Optical and Magnetic Materials Power (physics) Non-volatile memory Overshoot (signal) Electronic engineering Optoelectronics Electrical and Electronic Engineering business Ultrashort pulse |
| Zdroj: | IEEE Electron Device Letters. 34:502-504 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2013.2242843 |
| Popis: | In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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