Fabrications and electrical properties of ferroelectric Bi3.25La0.75Ti3O12thin films using a indium–tin-oxide conductive layer as the bottom electrode

Autor:	Kuang-woo Nam, Jungsuk Lee, Jaemoon Pak, Gwangseo Park
Rok vydání:	2004
Předmět:	Materials science business.industry Annealing (metallurgy) Mineralogy Dielectric Coercivity Condensed Matter Physics Ferroelectricity Indium tin oxide Electrode Optoelectronics General Materials Science Laser power scaling Thin film business
Zdroj:	Journal of Physics: Condensed Matter. 16:4983-4990
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/16/28/018
Popis:	Systematic effort was made to optimize the quality of ferroelectric Bi3.25La0.75Ti3O12 thin films, that were pulsed laser deposited onto indium–tin-oxide coated glass plates, by varying the conditions of laser fluence density, partial oxygen pressure and post-annealing temperature. Characterizations from the dielectric and ferroelectric measurements concluded that the films deposited with a laser power of 2.5 J cm−2, a deposition pressure of 200 mTorr and an annealing temperature of 650 °C showed the finest electrical properties, consisting of remnant polarization (2Pr) and coercive field (Ec) values of 28–32 µC cm−2 and 90–100 kV cm−1, respectively. No significant reduction in switching polarization magnitudes were observed until 1 × 1011 switching cycles, indicating that these electrical properties and the relevancy of the film with metallic-oxide ITO electrodes have satisfied the necessary requirements for applications in nonvolatile ferroelectric memory devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f7beb8ea1d730bb6abc21222a9c517b7 https://doi.org/10.1088/0953-8984/16/28/018 Zobrazit plný text záznamu