Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
| Autor: | Hans-Joachim Ludwig Gossmann, Anthony T. Fiory, Peter Frisella, Conor S. Rafferty, Aditya Agarwal |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Mechanical Engineering Analytical chemistry Condensed Matter Physics Mechanics of Materials Rapid thermal processing Shallow junction Optoelectronics Junction formation General Materials Science Rapid thermal annealing business Sheet resistance Junction depth |
| Zdroj: | Materials Science in Semiconductor Processing. 1:237-241 |
| ISSN: | 1369-8001 |
| Popis: | Ultra-shallow p-type junction formation has been investigated using 1050°C spike anneals in lamp-based and hot-walled rapid thermal processing (RTP) systems. A spike anneal may be characterized by a fast ramp-up to temperature with only a fraction of a second soak-time at temperature. The effects of the ramp-up rate during a spike anneal on junction depth and sheet resistance were measured for rates of 40, 70 and 155°C/s in a lamp-based RTP, and for 50 and 85°C/s in a hot-walled RTP. B + implants of 0.5, 2 and 5 keV at doses of 2×10 14 and 2×10 15 cm −2 were annealed. A significant reduction in junction depth was observed at the highest ramp-up rate for the shallower 0.5-keV B implants, while only a marginal improvement was observed for 2- and 5-keV implants. It is concluded that high ramp-up rates can achieve the desired ultra-shallow junctions with low sheet resistance but only when used in combination with spike anneals and the lowest energy implants. |
| Databáze: | OpenAIRE |
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