Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System
| Autor: | D. S. Poloskin, Anton E. Chernyakov, E. V. Gushchina, V. V. Emtsev, E. I. Shabunina, Vitali V. Kozlovski, A. P. Kartashova, A. G. Oganesyan, A. A. Zybin, Alexander Usikov, V. V. Lundin, A. V. Saharov, V. N. Petrov, N. A. Tal'nishnih, N. M. Shmidt, M. F. Kudoyarov |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Crystal growth 02 engineering and technology Semiconductor device High-electron-mobility transistor Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law Percolation 0103 physical sciences Optoelectronics 0210 nano-technology business Diode Light-emitting diode |
| Zdroj: | Semiconductors. 52:942-949 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618070072 |
| Popis: | A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed. |
| Databáze: | OpenAIRE |
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