Highly Resistive and Ultrafast Fe-Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch

Autor:	J. H. Shin, K. H. Park, N. Kim, C. W. Lee, E. D. Shim, Y. C. Kim, D.-S. Yee, J. O. Kim, S. J. Lee, S. K. Noh, Jisoon Ihm, Hyeonsik Cheong
Rok vydání:	2011
Předmět:	Resistive touchscreen Materials science Electrical resistance and conductance business.industry Hall effect Terahertz radiation Photoconductivity Optoelectronics Carrier lifetime business Ultrashort pulse Sheet resistance
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.3666684
Popis:	We develop highly‐resistive (i.e. low‐carrier‐density) and ultrafast Fe‐ion implanted InGaAs layers for the applications of THz photomixer and photoconductive switch. The measured Hall mobility, sheet resistance, carrier density, and carrier lifetime of the optimized 1.2‐μm‐thick Fe‐implanted InGaAs layer are 3.4×102 cm2/Vs, 0.24 MΩ, 6.5×1014 cm−3, and 0.13ps, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f7b33bf361d1cb89a341c0e5d2555f8a https://doi.org/10.1063/1.3666684 Zobrazit plný text záznamu