Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization

Autor:	胡多凯 Hu Duo-kai, 彭尚龙 Peng Shang-long, 贺德衍 He De-yan
Rok vydání:	2012
Předmět:	Materials science Fabrication business.industry Transistor Electronic Optical and Magnetic Materials law.invention Nickel silicide law Signal Processing Optoelectronics Crystallization Thin film business Instrumentation
Zdroj:	Chinese Journal of Liquid Crystals and Displays. 27:303-307
ISSN:	1007-2780
DOI:	10.3788/yjyxs20122703.0303
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f7b0686127634c8a648a6915ade4ff91 https://doi.org/10.3788/yjyxs20122703.0303 Zobrazit plný text záznamu