Optical and structural characterization of GaSb and Te-doped GaSb single crystals
| Autor: | D.G. Espinosa-Arbeláez, J. A. Villada, H. Ariza-Calderón, Gerardo Fonthal, Mario E. Rodríguez-García, J.A. Peñafiel, L. Tirado-Mejía, M. de los Ríos |
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| Rok vydání: | 2008 |
| Předmět: |
Diffraction
Materials science Photoluminescence Condensed Matter::Other business.industry Band gap Phonon Doping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Full width at half maximum Optics X-ray crystallography Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Physica B: Condensed Matter. 403:4027-4032 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2008.07.049 |
| Popis: | Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality. |
| Databáze: | OpenAIRE |
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