| Autor: |
Jean Lorenzzi, Gabriel Ferro, Efstathios K. Polychroniadis, Jean Camassel, Georgios Zoulis, Maya Marinova, Irina G. Galben-Sandulache, Teddy Robert, Olivier Kim-Hak, Alkyoni Mantzari, Didier Chaussende, Sandrine Juillaguet, Frédéric Mercier |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :383-386 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.645-648.383 |
| Popis: |
In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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