Pulsed‐jet etch chamber for preparing silicon samples for transmission electron microscopy

Autor: G. Hawkins, L. Rivaud
Rok vydání: 1985
Předmět:
Zdroj: Review of Scientific Instruments. 56:563-566
ISSN: 1089-7623
0034-6748
DOI: 10.1063/1.1138288
Popis: An apparatus is described for wet chemical etching of silicon specimens for transmission electron microscopy. This etch chamber thins the central portion of a 3‐mm disk to a specified thickness (1–50 μm) in a controlled and reproducible manner. The use of a pulsed jet in a sample chamber totally filled with etchant allows the etching process to be observed visually.
Databáze: OpenAIRE