GaPN/GaP nanowire-polymer matrix: photoluminescence study

Autor:	Vladimir Neplokh, O. Yu Koval, A. Yu. Serov, Ivan Mukhin, I. V. Strom, Vladimir V. Fedorov, Alexey D. Bolshakov
Rok vydání:	2020
Předmět:	chemistry.chemical_classification History Matrix (mathematics) Photoluminescence Materials science chemistry business.industry Nanowire Optoelectronics Polymer business Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1697:012157
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1697/1/012157
Popis:	This study is devoted to the investigation of the optical properties and composition of GaPN/GaP nanowire heterostructure. Nanowire arrays were grown on Si substrate (111) by the plasma-assisted molecular beam epitaxy. Polydimethylsiloxane membrane encapsulation was used to obtain the free-standing NW arrays. The morphology of GaPN/GaP NW was investigated with scanning electron microscopy. The optical properties of the GaPN nanowire arrays were determined at the He temperature (5K) with photoluminescence spectroscopy. Analysis of photoluminescence response allowed us to conclude that the incorporation of nitrogen atoms during the growth occurs both in the nanowires and in the parasitic islands with different content. Direct bandgap-like behaviour of the GaPN/GaP nanowires demonstrates the potential of nanowire-polymer matrix practical application in future optoelectronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f79cace1853b6975fbba6111d056f9ce https://doi.org/10.1088/1742-6596/1697/1/012157 Zobrazit plný text záznamu