Autor:	C. Rheinfelder, M. Rudolph, F. Beisswanger, W. Heinrich
Rok vydání:	2002
Předmět:	Materials science business.industry Semiconductor materials Thermal Nonlinear modelling Optoelectronics Microwave bipolar transistors business Monolithic microwave integrated circuit Leakage (electronics)
Zdroj:	1997 IEEE MTT-S International Microwave Symposium Digest.
Popis:	A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f78eda2148a5a7edf12c6ef4bea1cc70 https://doi.org/10.1109/mwsym.1997.602939 Zobrazit plný text záznamu