Modeling of the subthreshold characteristics of SOI MOSFETs with floating body
| Autor: | R. Sundaresan, Mishel Matloubian, Gordon P. Pollack, B.-Y. Mao, C.-E.D. Chen |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
business.industry Subthreshold conduction Transistor Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Subthreshold slope Electronic Optical and Magnetic Materials law.invention Threshold voltage law Hardware_INTEGRATEDCIRCUITS Equivalent circuit Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Hardware_LOGICDESIGN Floating body effect |
| Zdroj: | IEEE Transactions on Electron Devices. 37:1985-1994 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.57160 |
| Popis: | n-channel SOI MOSFETs with floating bodies show a threshold voltage shift and an improvement in subthreshold slope at high drain biases. The magnitude of this effect depends on the device parameters and the starting SOI substrate. A simple device model is presented that explains the observed characteristics to be due to MOS back-bias effects resulting from the positively charged floating body. The improvement in the subthreshold slope is the outcome of positive feedback between the body potential and the transistor channel current. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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