Conduction mechanisms in 2D and 3D SIS capacitors
| Autor: | Hugues Murray, Sébastien Jacqueline, Frédéric Voiron, Bernadette Domengès |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Dielectric Condensed Matter Physics Thermal conduction Capacitance Electronic Optical and Magnetic Materials law.invention Capacitor chemistry law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling Leakage (electronics) |
| Zdroj: | Semiconductor Science and Technology. 28:045018 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/28/4/045018 |
| Popis: | In this paper, we present a study of conduction mechanisms observed in high performance SIS capacitors (semiconductor–insulator–semiconductor) fabricated on bulk silicon. The combination of high aspect ratio 3D patterns and thin dielectric layers enables amazing capacitance density values. Electrical measurement and modeling of leakage currents have been associated with structural analysis in order to characterize different oxide–nitride stacks, and thus, to scale the layers and reach even higher capacitance densities. Conduction mechanisms are relevant of Fowler–Nordheim tunneling and Poole–Frenkel emission. |
| Databáze: | OpenAIRE |
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