High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
| Autor: | Rihito Kuroda, Tadahiro Ohmi, Weitao Cheng, Akinobu Teramoto, Masaki Hirayama |
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| Rok vydání: | 2007 |
| Předmět: |
Negative-bias temperature instability
Materials science business.industry Silicon on insulator Time-dependent gate oxide breakdown Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS Depletion region Gate oxide MOSFET Optoelectronics Degradation (geology) Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 84:2105-2108 |
| ISSN: | 0167-9317 |
| Popis: | In this paper, the electrical characteristics of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and a suppression of Negative bias temperature degradation in accumulation mode FD-SOI MOSFETs are described. Firstly, we experimentally demonstrate that the multi-gate MOSFETs using radical oxide effectively suppress the degradation of S-factor values resulted from its superior oxidation at the sidewall. Secondly, we indicate that the device performance is dramatically improved by introducing MUGFETs device structure originated from its effective channel area. Finally, we reveal the improvement of current drivability and a suppression of Negative bias temperature instability (NBTI) in accumulation mode FD-SOI MOSFETs. |
| Databáze: | OpenAIRE |
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