Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors
| Autor: | L. Faraone, John Dell, J.G.A. Wehner, Richard Sewell, C.A. Musca |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Detector Resonant cavity Condensed Matter Physics Electronic Optical and Magnetic Materials Responsivity chemistry.chemical_compound Optics chemistry Molecular beam epitaxial growth Ternary compound Infrared window Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Solid-State Electronics. 50:1640-1648 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2006.07.012 |
| Popis: | Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 /spl times/ 10/sup 4/ V/W for a 50 /spl times/ 50 /spl mu/m/sup 2/ photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the mid-wave infrared window (3-5 /spl mu/m). The measured responsivity is limited by surface recombination, which limits the effective lifetime to /spl ap/ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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