High-quality conductive In2O3〈Sn〉 and RuO2 layers grown by magnetron sputtering
| Autor: | R. Butkute, V. Lisauskas, B. Vengalis |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry Mineralogy Surfaces and Interfaces General Chemistry Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Indium tin oxide Sputtering Electrical resistivity and conductivity Physical vapor deposition Cavity magnetron Materials Chemistry Thin film |
| Zdroj: | Surface and Coatings Technology. :305-308 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(97)00638-5 |
| Popis: | Thin In 2 O 3 〈Sn〉 (ITO) and RuO 2 layers were grown in situ by reactive d.c. magnetron sputtering under Ar:O 2 pressures of 5–10 Pa on various crystalline substrates. Epitaxial ITO films have been prepared at 500–750 °C on (100), (110) and (211) surfaces of YSZ and MgO(100); meanwhile, the 〈011〉 axis-oriented RuO 2 has been grown epitaxially at 400–750 °C on α-Al 2 O 3 (1102). Carrier density and mobility in the films were evaluated from electrical resistivity, Hall effect, optical reflectance and transmittance measurements. In-situ resistivity measurements were performed to investigate stoichiometry variation of the ITO layers occurring with their annealing at various temperatures and oxygen pressures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect