Vertical stress in liquid-phase epitaxy Si layers on SiO2/Si evaluated by X-ray double-crystal topography
| Autor: | N Nagel, H. Raidt, E Bauser, Rolf Köhler, B. Jenichen |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Silicon chemistry.chemical_element Mineralogy Crystal growth Substrate (electronics) Condensed Matter Physics Overburden pressure Epitaxy Aspect ratio (image) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Stress (mechanics) chemistry Composite material |
| Zdroj: | Journal of Physics D: Applied Physics. 28:A50-A55 |
| ISSN: | 1361-6463 0022-3727 |
| Popis: | By means of X-ray double-crystal topography we have investigated silicon-on-insulator lamellae grown by liquid-phase epitaxy upon thermally oxidized silicon. The majority of the lamellae were free of extended defects. It is shown that the topographic contrasts of these lamellae are mainly due to vertical stress exerted by the lamellae onto the substrate. This is surprising because the aspect ratio (thickness/lateral dimension) is of the order of 10-2. Our first calculations lead us to estimate the stress to be around 10 N cm-2. A simple model, which may be assumed to apply in general for crystal growth on amorphous substrates, is described here. It relates the stress to an adhesive force, which acts during growth. |
| Databáze: | OpenAIRE |
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