Use of the ‘mist’ (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs
| Autor: | T. J. Leedham, Toshiaki Tatsuta, James F. Scott, Finlay D. Morrison, Marin Alexe, Osamu Tsuji |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Oxide Dielectric Condensed Matter Physics Porous silicon Ferroelectricity Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide Deposition (phase transition) Optoelectronics Electrical and Electronic Engineering Thin film business Photonic crystal |
| Zdroj: | Microelectronic Engineering. 66:591-599 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(02)00970-x |
| Popis: | We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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