A plasma immersion implantation system for materials modification
| Autor: | Nathan W. Cheung, Lucia Feng, William G. En, Michael A. Bryan, Wei Liu, Shu Qin, Michael I Current, Chung Chan, Ian S. Roth, Francois J. Henley, Albert Lamm, Igor J. Malik |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon business.industry Silicon on insulator chemistry.chemical_element Surfaces and Interfaces General Chemistry Plasma Condensed Matter Physics Plasma-immersion ion implantation Surfaces Coatings and Films Ion implantation chemistry Ionization Materials Chemistry Optoelectronics Wafer Atomic physics business Layer (electronics) |
| Zdroj: | Surface and Coatings Technology. 136:138-141 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(00)01043-4 |
| Popis: | A plasma immersion ion implantation (PIII) system is described which provides the capability to bridge the range between research exploration and commercial applications for materials modification of electronic materials, with a particular focus on layer transfer processes. The Silicon Genesis PIII system is capable of operation at high plasma densities (≈5×10 11 ions/cm 3 at the wafer) with high purity, mono-species ionization (>99% H + ions with a hydrogen plasma). The first generation of Silicon Genesis PIII systems is equipped to use 200-mm wafers (through an automated loadlock) and pulsed potentials up to 50 kV. Use of the mono-species ionization characteristic of the Silicon Genesis PIII system provides the capability to precisely vary the characteristics of surface layers through implantation of atoms and damage creation at well-controlled depths in the materials of choice. The Silicon Genesis PIII system is designed for efficient production of SOI and other layer transfer-generated materials and can be adapted for materials modification of more complex structures and work pieces. |
| Databáze: | OpenAIRE |
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