Multilevel Dual-Channel NAND Flash Memories with High Read and Program Verifying Speeds Utilizing Asymmetrically-Doped Channel Regions
| Autor: | Joo Hyung You, Tae Whan Kim, Kae Dal Kwack, Joung Woo Lee, Sang Hyun Jang |
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| Rok vydání: | 2010 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Computer science Nand flash memory Reading (computer) Doping NAND gate computer.software_genre Electronic Optical and Magnetic Materials Dual (category theory) Flash (photography) Electronic engineering Computer Aided Design Electrical and Electronic Engineering computer Communication channel |
| Zdroj: | IEICE Transactions on Electronics. :654-657 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e93.c.654 |
| Popis: | The multilevel dual-channel (MLDC) not-AND (NAND) flash memories cell structures with asymmetrically-doped channel regions between the source and the drain were proposed to enhance read and program verifying speeds. The channel structure of the MLDC flash memories consisted of two different doping channel regions. The technical computer aided design simulation results showed that the designed MLDC NAND flash cell with asymmetrically-doped channel regions provided the high-speed multilevel reading with a wider current sensing margin and the high-speed program verifying due to the sensing of the discrete current levels. The proposed unique MLDC NAND flash memory device can be used to increase read and program verifying speed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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