Aspects of Modeling the Electron Probe Heating of a Semiconductor Target

Autor:	E. V. Seregina, A. N. Amrastanov, M. A. Stepovich
Rok vydání:	2018
Předmět:	010302 applied physics Range (particle radiation) Energy loss Materials science business.industry Hadron General Physics and Astronomy Electron 01 natural sciences 010309 optics Semiconductor 0103 physical sciences Irradiation Atomic physics business Energy (signal processing) Electronic materials
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics. 82:1187-1192
ISSN:	1934-9432 1062-8738
Popis:	The problem of heat distribution in semiconductor materials irradiated by finely focused electron beams with no exchange of heat between the target and environment is investigated by means of mathematical modeling. In quantitatively describing the energy loss of probe electrons, a model applicable to a wide range of solids and primary electron energies is used that describes separately the contributions from absorbed and backscattered electrons to the energy dissipated in the target. The nonmonotonic dependence of the maximum target heating temperature on the primary electron energy is explained using aspects of the proposed approach. Some results are illustrated using the example of semiconductor electronic materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f755cb2f89507403f3d599a4f4bbd45b https://doi.org/10.3103/s1062873818090034 Zobrazit plný text záznamu Full text from SpringerLink