Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O
| Autor: | Wontae Noh, Tae Hyung Park, Satoko Gatineau, Jung Ho Yoon, Deok-Yong Cho, Sanjeev Gautam, Dae Eun Kwon, Cheol Seong Hwang, Sang Woon Lee, Seul Ji Song, Clement Lansalot-Matras, Han-Koo Lee, Kyung Jean Yoon |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Inorganic chemistry Thermal decomposition Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Oxygen 0104 chemical sciences Amorphous solid Atomic layer deposition chemistry Cyclopentadienyl complex General Materials Science Wafer Thermal stability Thin film 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 9:537-547 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 A cycle–1 at 250 °C and 0.67 A cycle–1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta–Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which ... |
| Databáze: | OpenAIRE |
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