Selective SnOx Atomic Layer Deposition Driven by Oxygen Reactants
| Autor: | Mi Yoo, Hyun Mo Lee, Hyun You Kim, Park Jung-Woo, Jung Hoon Lee, Yeonjin Yi, Donghee Kang, Jin-Seong Park, Wan Ho Choi |
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| Rok vydání: | 2018 |
| Předmět: |
Ozone
Materials science chemistry.chemical_element 02 engineering and technology Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Oxygen 0104 chemical sciences Amorphous solid Absorbance chemistry.chemical_compound Atomic layer deposition chemistry Chemical engineering General Materials Science Crystallite Thin film 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 10:33335-33342 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.8b12251 |
| Popis: | SnOx thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO2 films can be attributed to the stability of ozone and water on the SnO2 and SnO films. SnO and SnO2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were inv... |
| Databáze: | OpenAIRE |
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