Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)
| Autor: | Zhihong Feng, Zezhao He, Jia Li, Cui Yu, Shaobo Dun, Tie Lin, Shujun Cai, Kuanghong Gao, Liu Qingbin |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Condensed matter physics Scattering Graphene Carrier scattering Bilayer General Chemistry Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Weak localization Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Materials Chemistry Silicon carbide Bilayer graphene |
| Zdroj: | Solid State Communications. :119-122 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/j.ssc.2013.04.010 |
| Popis: | We investigated the magnetotransport properties of a bilayer graphene Hall bar sample epitaxially grown on Si-terminated silicon carbide. Integer quantum Hall effect and weak localization effect were observed. From the weak localization effect, the carrier scattering and phase coherence were extracted. The extracted phase coherence length is 0.5 μm at 2 K, which is comparable with that of the exfoliated graphene. The temperature dependence of the phase coherence rate shows that electron–electron interaction is the main inelastic-scattering factor and direct Coulomb interaction also exists. Compared with exfoliated bilayer graphene, no sign of weak antilocalization was observed at such high carrier concentration of 1013 cm−2 due to the strong intervally scattering. Both the strong intervally scattering and Coulomb interaction of phase coherence are due to the large amount of atomically sharp defects in epitaxial graphene on Si-terminated SiC. |
| Databáze: | OpenAIRE |
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